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ICs for MD System
AN8771NFH
Pre-amplifier IC for MD
s Overview
The AN8771NFH is an MD pre-amplifier IC of wide range of supply voltage (VCC = 2.7 V to 5.5 V). This IC can form an MD system using 3-beam pick-up in combination with the MN66614 digital signal processing LSI.
12.000.20 10.000.20 48 49 33 32
(1.25) 10.000.20 12.000.20
Unit: mm
s Features
* Applicable for 3-beam pick-up * RF signal processing * Error signal generating function for servo * Various status detection function * Laser power control circuit
64 1 0.50 16 (1.25)
0.100.10
17
+0.10
0.18-0.05
+0.1
0.15-0.05 1.950.20
(1.00)
s Applications
* MD
Seating plane
0 to 10 0.500.20
QFP064-P-1010 Note) The package of this product will be changed to lead-free type (QFP064-P-1010A). See the new package dimensions section later of this datasheet.
Publication date: February 2002
SDD00018CEB
1
AN8771NFH
s Block Diagram
GND2 VCC2 38 37 36
48
47
46
45
44
43
42
41
40
39
35
34
49 EQ 50 51 52 53 54 55 56 57 58 VCC3 59 60 61 62
Mirror 63 circuit
33
32
DSL 3TENV Pin 20
Mode control 31
VCC1
RF amp. AGC
Pin 21 NRF det.
30 OFT amp. 29 28
GND1
IV ASOF set IV IV IV VREF IV IV IV IV IV IV VREF IV IV TBAL /TOFSET FBAL /FOF set VCA VREF ASBDO VREF Pin 18 BPF VCA OFTR VREF RFBDO VCA
27 26 25 24 23 22 21 20 19 VREF 18 17 TRCRS GND4
VCA
64
10
11
12
13
14
15
s Pin Descriptions
Pin No. 1 Symbol REFO Description APC reference voltage buffer output pin 2 3 4 5 6 7 8 GND3 APCREF TEMPIN+ TEMPIN- TEMP TOFS TBAL APC circuit GND pin APC reference voltage input pin Temperature sensor amp. + input pin Temperature sensor amp. - input pin Temperature sensor amp. output pin Tracking offset adjustment pin Tracking balance adjustment pin 12 13 14 15 16 TRCRS FBAL FE TGAIN FOFS Pin No. 9 10 11 Symbol TE N.C. CCRS Capacitor connection pin for track cross circuit Track cross output pin Focus balance adjustment pin Focus error signal output pin TE amp. gain adjustment pin Focus offset adjustment pin Description Tracking error signal output pin
2
GND3
SDD00018CEB
16
1
2
3
4
5
6
7
8
9
AN8771NFH
s Pin Descriptions (continued)
Pin No. 17 Symbol AS Description Main beam light quantity sum signal output pin 18 19 ASOFS ASGAIN AS offset adjustment pin Amp. gain adjustment pin for main beam system 20 21 MON3T CEA 3T envelope detection output pin Capacitor connection pin for 3T envelope detection 22 23 GND4 BDO GND for FE/TE system AS drop-out detection signal output pin 24 CBDOG BDO detection capacitor connection pin 25 26 OFTR CBDOP Off-track signal output pin RFBDO detection capacitor connection pin 27 28 29 30 31 32 33 OFTIN OFTO ADIP GND1 NRFDET VCC1 RFSWHL Off-track detection signal input pin Off-track detection signal output pin ADIP FM signal output pin GND pin RF detection signal output pin VCC pin Reflection factor changeover signal input pin 34 RFSWPG Pit/group changeover signal input pin 35 NREC Recording/playback change over signal input pin 36 37 NRFSTBY Standby control signal input pin VCC2 Data slice circuit VCC pin 63 64 APCPD- REFIN 61 62 LDO APCPD+ Pin No. 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 Symbol PEFMS GND2 PEFM EFMIND EFMINS OUTRF CRFAGC EQADJ EQIN ARFO SVREF VREF RF1 RF2 SWMS B A D C F E VCC3 LDON Description Data slice output pin Data slice circuit GND pin Data slice level setting pin Data slice signal input pin EFM detection input pin EFM output pin RFAGC capacitor connection pin EQ setting pin EQ input pin RF amp. output pin Reference signal input pin Reference signal output pin RF1 signal input pin RF2 signal input pin Pit RF amp. polarity setting pin Main beam B signal input pin Main beam A signal input pin Main beam D signal input pin Main beam C signal input pin Side beam F signal input pin Side beam E signal input pin APC circuit VCC pin LD amp. on/off control signal input pin LD amp. output pin Photo diode light quantity detection pin PD polarity reversing current input pin APC amp. reference voltage input pin
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3
AN8771NFH
s Absolute Maximum Ratings
Parameter Supply voltage Supply current Power dissipation * Operating ambient temperature * Storage temperature * Symbol VCC ICC PD Topr Tstg Rating 6.0 35 210 -30 to +85 -55 to +125 Unit V mA mW C C
Note) 1. Except for the operating ambient temperature and storage temperature, all ratings are for Ta = 25C. 2. *: VCC1 , VCC2 , VCC3 are of same voltage.
s Recommended Operating Range
Parameter Supply voltage Symbol VCC1 VCC2 VCC3 Range 2.7 to 5.5 Unit V
s Electrical Characteristics at Ta = 25C
Parameter No load current consumption 1 No load current consumption 2 (Power saving mode) VREF offset VREF output impedance LD amp. off operation LD amp. gain FE offset + adjustment FE offset - adjustment FE gain 1 Symbol ITOTAL1 ITOTAL2 VOVB ZVB VLDOFF GLD VOFO+ VOFO- GFEA1 Conditions Normal mode Power saving mode V48 = V32 / 2 I49 = 3 mA LD amp. off mode V62: 1 kHz sine wave (50 mV[p-p], DC offset voltage = VREF - 25 mV) V16 = VREF - 0.5 V V19 = VREF - 0.5 V V16 = VREF + 0.5 V V19 = VREF - 0.5 V V54: 5 kHz sine wave (40 mV[p-p], DC offset voltage = VREF - 25 mV) V19 = VREF - 0.5 V V54: 5 kHz sine wave (300 mV[p-p], DC offset voltage = VREF - 160 mV) V19 = VREF + 0.5 V Min 19.6 1.0 -7 18 100 20 Typ 24.5 1.7 0 20 23 Max 29.4 2.5 7 5 0.4 22 -100 26 Unit mA mA mV V dB mV mV dB
FE relative gain 2
GFEA2
-18
dB
FE frequency characteristics A
GFEACA V54: 50 kHz sine wave (300 mV[p-p], DC offset voltage = VREF - 160 mV) V19 = VREF - 0.5 V GFB12 V13 = VREF 0.5 V V19 = VREF + 0.5 V
-6
-3
0
dB
FBAL adjustment range 12
-12
-9.6
dB
4
SDD00018CEB
AN8771NFH
s Electrical Characteristics at Ta = 25C (continued)
Parameter FBAL adjustment range 34 TE offset + adjustment Symbol GFB34 VOTO+ Conditions V13 = VREF 0.5 V V19 = VREF + 0.5 V V7 = VREF - 0.5 V V15 = VREF - 0.5 V Pit mode V7 = VREF + 0.5 V V15 = VREF - 0.5 V Pit mode V58: 5 kHz sine wave (4 mV[p-p], DC offset voltage = VREF - 3 mV) V15 = VREF - 0.5 V, Pit mode V58: 5 kHz sine wave (40 mV[p-p], DC offset voltage = VREF - 25 mV) V15 = VREF + 0.5 V, Pit mode Min 9.6 100 Typ 12 Max Unit dB mV
TE offset - adjustment
VOTO-
-100
mV
TE gain 1
GTEE1
37.5
42.5
47.5
dB
TE relative gain 2
GTEE2
-18
dB
TE frequency characteristics E
GTEACE V58: 100 kHz sine wave (40 mV[p-p], DC offset voltage = VREF - 25 mV) V15 = VREF + 0.5 V, Pit mode GTB12 GTB34 V8 = VREF 0.5 V V15 = VREF + 0.5 V, Pit mode V8 = VREF 0.5 V V15 = VREF + 0.5 V, Pit mode
-6
-3
0
dB
TBAL adjustment range 12 TBAL adjustment range 34 AS offset + adjustment AS offset - adjustment AS gain 1
2.3 100
-3 3 13.6
-2.3 -100 15.6
dB dB mV mV dB
VOASO+ V18 = VREF - 0.5 V V19 = VREF - 0.5 V VOASO- V18 = VREF + 0.5 V V19 = VREF - 0.5 V GAS1
V54: 5 kHz sine wave (50 mV[p-p], 10.6 DC offset voltage = VREF - 30 mV) V19 = VREF - 0.5 V V54: 5 kHz sine wave (300 mV[p-p], DC offset voltage = VREF - 160 mV) V19 = VREF + 0.5 V V54: 5 kHz sine wave (300 mV[p-p], DC offset voltage = VREF - 160 mV) V19 = VREF + 0.5 V, Group mode V54: 50 kHz sine wave (300 mV[p-p], DC offset voltage = VREF - 160 mV) V19 = VREF + 0.5 V V54: 21.6 kHz sine wave (12 mV[p-p], DC offset voltage = VREF - 7 mV) V19 = VREF - 0.5 V
AS relative gain 2
GAS2
-18
dB
AS OFTO amp. relative gain
GASOF
5.8
6.8
7.8
dB
AS frequency characteristics
GASAC
-6
-3
0
dB
ADIP gain 1
GAD1
31
37
40
dB
ADIP relative gain 2
GADVCA2 V54: 21.6 kHz sine wave (150 mV[p-p], DC offset voltage = VREF - 80 mV) V19 = VREF + 0.5 V
SDD00018CEB
-18
dB
5
AN8771NFH
s Electrical Characteristics at Ta = 25C (continued)
Parameter ADIP frequency characteristics 1 Symbol GADf1 Conditions V54: 18 kHz sine wave (150 mV[p-p], DC offset voltage = VREF - 80 mV) V19 = VREF + 0.5 V V54: 26 kHz sine wave (150 mV[p-p], DC offset voltage = VREF - 80 mV) V19 = VREF + 0.5 V V54: 100 kHz sine wave (18 mV[p-p]) Group mode V54: 100 kHz sine wave (120 mV[p-p]) Pit low reflection factor mode V54: 100 kHz sine wave (300 mV[p-p]) Pit high reflection factor mode V54: 4 MHz sine wave (18 mV[p-p]) Group mode V54: 4 MHz sine wave (120 mV[p-p]) Pit low reflection factor mode V54: 4 MHz sine wave (300 mV[p-p]) Pit high reflection factor mode V54: 200 Hz, 720 kHz sine wave (100 mV[p-p]) V45 = GND, V44 = VREF - 0.2 V V54: 200 Hz, 720 kHz sine wave (100 mV[p-p]) V45 = 400 mV, V44 = VREF - 0.2 V V46: 500 kHz sine wave (200 mV[p-p]) V41: 720 kHz sine wave (500 mV[p-p]) V46: 500 kHz sine wave (Amplitude sweep) V46: 500 kHz sine wave (Amplitude sweep) V46 : 500 kHz sine wave (Amplitude sweep) V7: Sweep + 0 to max. +150 mV in DC refering to V6 as reference V7: Sweep + 0 to max. -150 mV in DC refering to V6 as reference V7 = V6 + 100 mV V7 = V6 - 100 mV Apply to the pin 24 DC voltage which is 200 mV higher than that at open Apply to the pin 24 DC voltage which is 1.1 V higher than that at open
SDD00018CEB
Min
Typ -3
Max 0
Unit dB
ADIP frequency characteristics 2
GADf2
-3
0
dB
RF amp. gain in group mode (playback) RF amp. gain in low reflection factor (playback) RF amp. gain in high reflection factor (playback) RF amp. frequency characteristics in group mode (playback) RF amp. frequency characteristics in low reflection factor (playback) RF amp. frequency characteristics in high reflection factor (playback) EQ gain adjustment 1
GRFG GRFPL GRFPH GRFG
18.8 1.5 -8 -3
20.8 3.5 -6
22.8 5.5 -4
dB dB dB dB
GRFPL
-3
dB
GRFPH
-3
dB
GEQ1
1.5
3.0
dB
EQ gain adjustment 2
GEQ2
3.5
5.0
dB
AGC operation DSL pulse output duty NRF detection operation NRF detection high-level voltage NRF detection low-level voltage TRCRS detection voltage 1 TRCRS detection voltage 2 TRCRS high-level voltage TRCRS low-level voltage ASBDO detection current 1 ASBDO detection current 2
VOMRFV TDSL VRFD VRFDH VRFDL VH1TCR VH2TCR VTCRH VTCRL ICBDO1 ICBDO2
420 47 58 2.1 0 63 -120 2.1 0 0.7 17
520 50 83 90 -90 1.0 26
620 53 108 3.0 0.4 120 -63 3.0 0.4 1.5 39
mV % mV V V mV mV V V A A
6
AN8771NFH
s Electrical Characteristics at Ta = 25C (continued)
Parameter BDO high-level voltage BDO low-level voltage RFBDO detection current 1 RFBDO detection current 2 RFBDO detection operation Symbol VBDOH VBDOL Conditions V17 < VREF + 50 mV V54: Apply voltage so as to get V17 = VREF + 200 mV Min 2.1 0 0.33 6.7 15 Typ 0.50 10 30 Max 3.0 0.4 0.75 15 60 Unit V V A A s
ICRFBDO1 V26: Apply voltage 100 mV higher than that of at open ICRFBDO2 V26 = VREF + 0.3 V tRFB V46: 500 kHz sine wave (200 mV[p-p] 0 mV[p-p]) V26: Fix to DC voltage at which 200 mV[p-p] is inputted to V46
3T component envelope extracting gain OFTO EFM detection gain
G3TMON
V41: 720 kHz AM sine wave modulation 15.5 (500 mV[p-p]) AM sine wave: 5.3 kHz 20% V41: 720 kHz AM sine wave modulation (500 mV[p-p]) AM modulation: 5.3 kHz 20% EFM detection output mode V27: Sweep VREF - 100 mV to VREF + 100 mV in DC V27 = VREF - 100 mV V27 = VREF + 100 mV V5 = VREF 0.5 V V3: 20 kHz sine wave (0.5 V[p-p]) -6
18.5
21.5
dB
GEFMOF
-3
0
dB
OFTIN detection level OFTR high-level voltage OFTR low-level voltage TEMP amp. gain REFO gain
VOFTI VOFTH VOFTL GTM GREFO
35 2.1 0 -2 -2
50 0 0
65 3.0 0.4 2 2
mV V V dB dB
s Technical Data
1. Operation mode set by mode setting Setting pin Operation mode Pit high reflection factor mode Pit low reflection factor mode Group mode Operation off mode Setting pin Operation mode EFM detection output mode AS output mode RFSWPG High-level Low-level Pit mode MO pit playback mode MO group playback mode MO recording mode NREC High-level High-level High-level Low-level RFSWPG High-level High-level Low-level RFSWHL High-level Low-level Low-level
SDD00018CEB
7
AN8771NFH
s Technical Data (continued)
1. Operation mode set by mode setting (continued) Setting pin Operation mode Pit mode Group mode Setting pin Operation mode Operation on mode Operation off mode Setting pin Operation mode Normal mode Power saving mode NREC High-level Low-level LDON High-level Low-level RFSWPG High-level Low-level
2. Voltage to be applied to setting pin Setting Pin name RFSWHL RFSWPG High-level NREC NRFSTBY LDON RFSWHL RFSWPG Low-level NREC NRFSTBY LDON 0V 0.5 V SVREF = VCC1 / 2 VCC3 - 0.5 V VCC3 VCC1 - 0.5 V VCC1 SVREF = VCC1 / 2 Lower limit Upper limit Condition
3. For SWMS (pin 52) setting In the pit high reflection factor mode and low reflection factor mode, the polarity of ARFO (pin 47) through RF1 (pin 50)*RF2 (pin 51) is shown below by setting of SWMS: SWMS High-level Low-level Polarity Reverse Normal
8
SDD00018CEB
AN8771NFH
s Technical Data (continued)
4. Internal circuit of APCPD- (pin 63)
REFIN 64 APCPD+ 62
61 LDO VCC3
APCPD- 63
A current mirror circuit of which primary side is APCPD- is built-in. In case where output of secondary side is connected to APCPD+ and PD current for laser monitor is sunk to PD, the direction of current can be reversed by connecting the PD output to APCPD- . Mirror ratio is 1 to 1 as the hFE = When using no current mirror, connect APCPD- to VCC3 .
s Application Circuit Example
Microcomputer PWM signal
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
VREF 49
PD PD
VCC2
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
VCC1
50 Head amp. 51 52 53 54 55 56 57 58 59 60
Optical pick-up
PD PD PD PD PD
VCC3
PD
PD
61 62 Laser diode VREF 63 64
10
11
12
13
14
15
VREF Laser drive reference voltage Temperature sensor
Survo-LSI
16
1
2
3
4
5
6
7
8
9
SDD00018CEB
9
AN8771NFH
s New Package Dimensions (Unit: mm)
* QFP064-P-1010A (Lead-free package) 12.000.20 10.000.20 48 49 33 32
(1.25) 10.000.20 12.000.20 0.100.10 1.950.20
64 1 0.50
17 16 0.180.05
(1.25)
0.10 M
0.10 Seating plane (1.00)
0.150.05
0 to 10 0.500.20
10
SDD00018CEB
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(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.
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2001 MAR

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